General
Device Type
Solid state drive - internal
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Triple-level cell (TLC)
Interface
PCIe 3.0 x4 (NVMe)
Features
TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Performance
Internal Data Rate
3500 MBps (read) / 3300 MBps (write)
4KB Random Read
19000 IOPS
4KB Random Write
60000 IOPS
Maximum 4KB Random Write
550000 IOPS
Maximum 4KB Random Read
600000 IOPS
Reliability
Expansion & Connectivity
Interfaces
PCI Express 3.0 x4 (NVMe) - M.2 Card
Power
Power Consumption
6 Watt (average) ¦ 9 Watt (maximum) ¦ 30 mW (idle max)
Miscellaneous
Compliant Standards
IEEE 1667
Manufacturer Warranty
Service & Support
Limited warranty - 5 years
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Shock Tolerance (operating)
1500 g @ 0.5 ms half-sine
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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