General
Device Type
Solid state drive - internal
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Triple-level cell (TLC)
Interface
PCIe 3.0 x4 (NVMe)
Features
RAPID mode support, V-NAND Technology, eDrive, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Performance
Internal Data Rate
3500 MBps (read) / 3300 MBps (write)
4KB Random Read
19000 IOPS
4KB Random Write
60000 IOPS
Maximum 4KB Random Write
560000 IOPS
Maximum 4KB Random Read
620000 IOPS
Expansion & Connectivity
Interfaces
PCI Express 3.0 x4 (NVMe) - M.2 Card
Miscellaneous
Compliant Standards
IEEE 1667
Manufacturer Warranty
Service & Support
Limited warranty - 5 years
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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