General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
TLC (triple-level cell)
Interface
PCIe 3.0 x4 (NVMe)
Features
TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Performance
Internal data throughput
3500 MBps (read) / 2300 MBps (write)
4 KB Random Read
17000 IOPS
4 KB Random Write
60000 IOPS
Maximum 4 KB Random Write
550000 IOPS
Maximum 4 KB Random Read
250000 IOPS
Reliability
Expansion and connectivity
Interfaces
PCI Express 3.0 x4 (NVMe) - M.2 Card
Compatible switch panel
M.2 2280
Power Supply
Power Consumption
5 watts (average)
8 watts (maximum)
30 mW (maximum inactivity)
Miscellaneous
Manufacturer's warranty
Service and support
Limited warranty - 5 years
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Shock tolerance (during operation)
1500 g @ 0.5 ms half sine wave
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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