General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
Quad-Level Cell (QLC)
Form factor
2.5" (6.4 cm)
Features
TRIM support, garbage collection technology, sleep mode, TurboWrite technology, V-NAND technology, low power DDR4 SDRAM cache, Samsung MKX controller, S.M.A.R.T., 256-bit AES, IEEE 1667
Performance
Internal data throughput
560 MBps (read) / 530 MBps (write)
4 KB Random Read
11000 IOPS
4 KB Random Write
35000 IOPS
Maximum 4 KB Random Write
88000 IOPS
Maximum 4 KB Random Read
98000 IOPS
Reliability
Expansion and connectivity
Interfaces
1 x SATA 6 Gb/s - 7-pin Serial ATA
Compatible control panel
2.5" (6.4 cm)
Power Supply
Power Consumption
3.3 watts (average)
5.5 watts (maximum)
0.0.45 watts (idle)
Manufacturer's warranty
Service and support
Limited warranty - 3 years
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Shock tolerance (during operation)
0.5 ms half sine wave
Shock tolerance (not operating)
1500 g @ 0.5 ms
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
There are no reviews yet.
German
Italian
