General
Device Type
Solid state drive - internal
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
Quad-level cell (QLC)
Features
TRIM support, Garbage Collection technology, sleep mode, TurboWrite Technology, V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667
Performance
Internal Data Rate
560 MBps (read) / 530 MBps (write)
4KB Random Read
11000 IOPS
4KB Random Write
35000 IOPS
Maximum 4KB Random Write
88000 IOPS
Maximum 4KB Random Read
98000 IOPS
Reliability
Expansion & Connectivity
Interfaces
1 x SATA 6 Gb/s - 7 pin Serial ATA
Power
Power Consumption
3.3 Watt (average) ¦ 5.5 Watt (maximum) ¦ 0.045 Watt (idle)
Manufacturer Warranty
Service & Support
Limited warranty - 3 years
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Shock Tolerance (operating)
0.5 ms half-sine
Shock Tolerance (non-operating)
1500 g @ 0.5 ms
Product safety information
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