General
Device Type
Solid state drive - internal
Features
Native Command Queuing (NCQ), TRIM support, Samsung V-NAND 3bit MLC Technology
Performance
Data Transfer Rate Details
Serial ATA: 600 MB/s
Internal Data Rate
520 MBps (read) / 500 MBps (write)
4KB Random Read
97000 IOPS
4KB Random Write
26000 IOPS
Reliability
Non-Recoverable Errors
1 per 10^17
Expansion & Connectivity
Interfaces
1 x SATA 6 Gb/s
Power
Power Consumption
2.1 Watt (read) ¦ 3.2 Watt (write) ¦ 1.3 Watt (idle)
Miscellaneous
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Min Storage Temperature
-40 °C
Max Storage Temperature
85 °C
Humidity Range Operating
5 - 95% (non-condensing)
Shock Tolerance (non-operating)
1500 g @ 0.5 ms half-sine
Vibration Tolerance (non-operating)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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