General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
TLC (triple-level cell)
Form factor
2.5" (6.4 cm)
Interface
U.2 PCIe 3.0 x4 (NVMe)
Features
Halogen Free, Dynamic and Static Wear Leveling, Enhanced Power Loss Data Protection, End-to-End Data Protection, NVM Express (NVMe) 1.4, S.M.A.R.T.
Performance
Disk recordings per day
1
Internal data throughput
3500 MBps (read)/ 3500 MBps (write)
4 KB Random Read
800000 IOPS
4 KB Random Write
200000 IOPS
Reliability
Non-correctable data errors
1 in 10^17
Expansion and connectivity
Interfaces
PCI Express 3.0 x4 U.2 (NVMe)
Compatible panel
2.5" (6.4 cm)
Power Supply
Power Consumption
11 watts (read)
13.5 watts (writing)
3.5 watts (idle)
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Shock tolerance (during operation)
1500 g @ 0.5 ms half sine wave
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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