General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES-XTS
NAND flash memory type
Multi-Level Cell (MLC)
Interface
PCIe 4.0 x4 (NVMe)
Features
V-NAND technology, Samsung Elpis controller
Power
Internal data throughput
5500 MBps (read)/ 2000 MBps (write)
4 KB Random Read
800000 IOPS
4 KB Random Write
85000 IOPS
Reliability
Non-correctable data errors
1 in 10^17
Expansion and connectivity
Interfaces
PCI Express 4.0 x4 (NVMe)
Compatible switch field
M.2 22110
Power Supply
Power Consumption
8.2 watts (read)
8.2 watts (writing)
2.5 watts (idle)
Miscellaneous
Marking
TUV, VCCI, BSMI, cUL, CB, IC, FCC, RoHS, KCC, halogen-free, RCM
Environmental
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Min. storage temperature
-40°C
Max. storage temperature
85 °C
Permissible humidity during operation
5 - 95% (non-condensing)
Shock tolerance (not in operation)
1500 g
Vibration tolerance (not in operation)
20 g @ 10-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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