General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
3D triple-level cell (TLC)
Form factor
2.5" (6.4 cm)
Features
Native Command Queuing (NCQ), TRIM support, Power Disable Pin (Pin 3)
Performance
Disk recordings per day
1.3
Data transfer speed details
Serial ATA: 600 MB/s
Transfer rate drive
600 MBps (external)
Internal data throughput
550 MBps (read) / 520 MBps (write)
4 KB Random Read
98000 IOPS
4 KB Random Write
28000 IOPS
Reliability
Non-correctable data errors
1 in 10^17
Expansion and connectivity
Compatible control panel
2.5" (6.4 cm)
Power Supply
Power Consumption
2.3 watts (reading)
2.9 watts (writing)
1.3 watts (idle)
Miscellaneous
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Min. storage temperature
-40°C
Max. storage temperature
85 °C
Permissible humidity during operation
5 - 95% (non-condensing)
Shock tolerance (not in operation)
1500 g @ 0.5 ms half sine
Vibration tolerance (not in operation)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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