General
Device Type
Solid state drive - internal
Encryption Algorithm
256-bit AES
NAND Flash Memory Type
3D triple-level cell (TLC)
Features
Native Command Queuing (NCQ), TRIM support, Power Disable Pin (Pin3)
Performance
Drive Writes Per Day (DWPD)
1.3
Data Transfer Rate Details
Serial ATA: 600 MB/s
Drive Transfer Rate
600 MBps (external)
Internal Data Rate
550 MBps (read) / 520 MBps (write)
4KB Random Read
98000 IOPS
4KB Random Write
28000 IOPS
Reliability
Non-Recoverable Errors
1 per 10^17
Expansion & Connectivity
Power
Power Consumption
2.3 Watt (read) ¦ 2.9 Watt (write) ¦ 1.3 Watt (idle)
Miscellaneous
Environmental Parameters
Min Operating Temperature
0 °C
Max Operating Temperature
70 °C
Min Storage Temperature
-40 °C
Max Storage Temperature
85 °C
Humidity Range Operating
5 - 95% (non-condensing)
Shock Tolerance (non-operating)
1500 g @ 0.5 ms half-sine
Vibration Tolerance (non-operating)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
There are no reviews yet.
German
