General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
TLC (triple-level cell)
Interface
PCIe 4.0 x4 (NVMe)
Features
Samsung V-NAND 3bit MLC Technology, 2 GB LPDDR4 DRAM Cache, TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, Sleep mode, NVMe 2.0, S.M.A.R.T.
Performance
Transfer rate drive
8 GBps (external)
Internal data throughput
7450 MBps (read) / 6900 MBps (write)
4 KB Random Read
1400000 IOPS
4 KB Random Write
1550000 IOPS
Reliability
Expansion and connectivity
Compatible switch panel
M.2 2280
Power supply
Power Consumption
5.8 watts (read)
5.1 watt (writing)
55 mW (idle)
5 mW (L1.2 mode)
Software & System Requirements
Software included
Samsung Magician Software
Miscellaneous
Labeling
IEEE 1667, FCC, UKCA, cRUus, VCCI, EAC
Manufacturer's warranty
Service and support
Limited warranty - 5 years / 1200 TBW
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Min. storage temperature
-40°C
Max. storage temperature
85 °C
Permissible humidity during operation
5 - 95% (non-condensing)
Shock tolerance (not in operation)
1500 g @ 0.5 ms
Vibration tolerance (not in operation)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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