General
Device type
Solid State Drive - internal
Form factor
2.5" (6.4 cm)
Features
Native Command Queuing (NCQ), TRIM support, Samsung V-NAND 3bit MLC Technology
Performance
Data transfer rate details
Serial ATA: 600 MB/s
Internal data throughput
550 MBps (read) / 520 MBps (write)
4 KB Random Read
98000 IOPS
4 KB Random Write
30000 IOPS
Reliability
Non-correctable data errors
1 per 10^17
Expansion and connectivity
Interfaces
1 x SATA 6 Gb/s
Compatible panel size
2.5" (6.4 cm)
Power Supply
Power Consumption
2.1 watt (reading)
3.2 watts (writing)
1.3 watts (idle)
Miscellaneous
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70 °C
Min. storage temperature
-40°C
Max. storage temperature
85 °C
Permissible humidity during operation
5 - 95% (non-condensing)
Shock tolerance (not in operation)
1500 g @ 0.5 ms half sine
Vibration tolerance (not in operation)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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