General
Device type
Solid State Drive - internal
Encryption algorithm
256-bit AES
NAND flash memory type
TLC (triple-level cell)
Interface
PCIe 5.0 x2 (NVMe)
Features
Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep Support, Host Memory Buffer (HMB), TRIM Support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
Power
Internal data throughput
7150 MBps (read)/ 6300 MBps (write)
Maximum 4 KB Random Write
1350000 IOPS
Maximum 4 KB Random Read
850000 IOPS
Reliability
Expansion and connectivity
Compatible switch panel
M.2 2280
Power supply
Power Consumption
4.3 watts (reading)
4.2 watts (write)
60 mW (standby)
5 mW (sleep mode)
Software & System Requirements
Software included
Samsung Magician Software
Various
Casing material
Nickel plating
Manufacturer's warranty
Service and support
Limited warranty - 5 years / 600 TBW
Environmental conditions
Min. operating temperature
0 °C
Max. operating temperature
70°C
Shock tolerance (not in operation)
1500 g @ 0.5 ms
Vibration tolerance (not in operation)
20 g @ 20-2000 Hz
Product safety information
Manufacturer information:
Samsung Electronics GmbH
Am Kronberger Hang 6
Baden-Württemberg
Schwalbach am Taunus, Deutschland, 65824
kundenbetreuung@samsung.de
https://www.samsung.com/de/
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